If getting your IT systems to support privacy legislation is your jam, you’re going to love the latest update to the Personal Information Protection and Electronic Documents Act (PIPEDA). Better yet, you can apply your experience meeting the General Data Protection Regulation (GDPR) to your compliance efforts.
Read my closer look at what’s involved in this update and what steps you can take to remain compliant over at Tektonika.
Gone are the days of having to manually defrag your hard drive because it’s done automatically, and flash doesn’t experience file fragmentation. Or does it?
It may be that your smartphone is running slow because it can’t keep up with software updates and bloating, but that its flash storage is experiencing file fragmentation. Joel Catala, director of Embedded Solutions at Tuxera, said that contrary to popular belief, fragmentation can significantly affect performance of a flash device. Recent research suggests that as flash storage hardware gets faster, the software I/O stack overhead is an I/O performance bottleneck, he said in a telephone interview with EE Times. It’s not the flash or the controller responsible for the bottleneck.
Read the full EE Time story.
Last year was the worst year to date for cyber attacks, but many predict 2018 will be even worse.
Given how 2018 is going so far, that’s not hard to believe. The frequency of high-profile breaches is only increasing, and the payouts hackers enjoy are getting bigger. In an environment where cybercrime prevention can feel like a losing battle, how can you help your company stay secure?
Read the full story on Tektonika.
oom or bust. It’s long been the cycle for established memory technologies. As 3D NAND pricing softens, DRAM still appears to be going strong. But for how long? And will these ups and downs always be the norm despite diversified demand and emerging vendors from China?
One key characteristic of the DRAM market is that there are currently only three major suppliers — Micron Technology, SK Hynix and Samsung Electronics.
“They’re keeping a pretty tight rein on their capacity,” said Brian Matas, vice president of market research at IC Insights, said in a telephone interview with EE Times. “And at the same time, there’s also pretty strong demand for higher performance and higher-density parts, particularly from the data center and server applications.”
Read my EE Times story.
With the automotive market presenting potential opportunities of ever-emerging memories such as ferroelectric RAM (FRAM), magnetoresistive RAM (MRAM), and resistive RAM (ReRAM), Adesto Technologies is working hard to make sure that the latter makes the grade.
It recently unveiled new research demonstrating the potential of ReRAM for high-reliability applications such as automotive. The research was led by Adesto Fellow Dr. John Jameson, who shared the results at the ESSCIRC-ESSDERC 48th European Solid-State Device Research Conference earlier this month, and indicates that ReRAM could become a widely used, low-cost, and simple embedded non-volatile memory (eNVM) because it uses simple cell structures and materials that can be integrated into existing manufacturing flows with as little as one additional mask.
Read my latest for EE Times.
TORONTO — As cars get smarter and demand more memory, many technologies are angling for the driver’s seat, but it’s safe to say NOR flash at least gets to ride shotgun.
As a successor to EEPROM in many applications thanks to its programmability capabilities, NOR flash is finding new opportunities in application areas that need fast, non-volatile memory, including communications, industrial and automotive. The latter, of course, is getting a lot of attention thanks to autonomous vehicle development.
Macronix International, which describes itself as the leading supplier of NOR flash overall, find itself in the third position for automotive. But Anthony Le, senior director of marketing, ecosystem partnership and North America automotive, said the company is confident it will lead that segment in the next two to three years.
Read the full story on EE Times.
TORONTO — On the heels of shaking up its partnership with Intel, Micron Technology Chief Technology Officer Ernie Maddock took the stage at the J.P. Morgan 16th Annual Tech Forum at the 2018 International CES to field questions about the road ahead.
In a Q&A and session moderated by Harlan Sur, analyst for U.S. Semiconductor and Semiconductor Capital Equipment Research at J.P. Morgan, Maddock emphasized that the update to Micron’s working relationship with Intel is only related to NAND development.
At the top of the week, the companies announced they have mutually agreed to work independently on future generations of 3D NAND. Micron and Intel will complete development of their third-gen 3D NAND technology toward the end of the year and into 2019. Maddock said based on evolving roadmaps and the needs of each company’s respective markets, it made sense to diverge for the next node.
Read the full article over at EE Times.
TORONTO — Following on the heels of a major specification update and its eighth annual plug fest, NVM Express is poised to have a busy year as it continues to develop the base NVMe specification while expanding the NVMe Management Interface (NVMe-MI) specification and one for accessing SSDs on a PCIe bus over fabrics.
In June, the NVMe specification got its first major update in nearly three years, putting it on the cusp of becoming the defacto standard for SSD interfaces. Version 1.3 added a significant number of new features, something that hasn’t been done since November 2014, encompassing 24 technical proposals spread across three major buckets that address client, enterprise and cloud features. Most significant was improved support for virtualization so developers can more flexibly assign SSD resources to specific virtual machines, thereby addressing latency.
Meanwhile, the eighth NVMe Plugfest at the University of New Hampshire Interoperability Laboratory last fall offered the first official NVMe Over Fabrics (NVMe-oF) compliance and interoperability transport layer testing for RoCE, Remote Direct Memory Access (RDMA) over Converged Ethernet, and the Fibre Channel. UNH-IOL fills the role of independent testing provider of standards conformance solutions and multi-vendor interoperability, and the latest plugfest generated 14 new certified products for the base NVMe integrators list and one for the NVMe-MI integrators list. Eight inaugural products were also approved for the newly launched NVMe-oF integrators list, which accepts RoCE initiators and targets, Ethernet switches, as well as Fibre Channel initiator, targets and switches and software.
Read the full story over at EE Times.
You’re probably all getting pretty tired of the debate raging on about the role of oil pipelines in our economy, but hopefully some info on clean tech has cut through all the noise. Behind the scenes, Canadian clean tech has been soldiering on, leveraging information technology, the Internet of Things (IoT), and even quantum computing to promote sustainability as modern tech drives us forward.
And with Canada’s Environment Minister as one of 30 committed to the Paris Accord, there are plenty of greenfield opportunities to build business solutions around clean tech in Canada. Better yet: There’s an important role for skilled IT people to play.
Read the full story over at HP Tektonika.
TORONTO — Last year could be described as a tipping point for the magneto-resistive random access memory (MRAM) market. Up until then, Everspin Technologies was the only company shipping commercial MRAM products. But as Spin Transfer Technologies (STT) CEO Barry Hoberman is always quick to acknowledge, Everspin’s success has helped to pave the way for other MRAM players.
The genesis of STT goes back as far as 2001 with technology originally developed from research conducted by New York University Professor Andrew Kent. STT was formed and incubated by Boston-based Allied Minds in 2007. In September 2016, the developer of orthogonal spin transfer MRAM technology (OST-MRAM) announced it had fabricated perpendicular MRAM magnetic tunnel junctions (MTJs) as small as 20nm at its development fab based at the company’s headquarters in Fremont, Calif.
Since then, STT has delivered samples of its spin transfer torque MRAM to customers in North America and Asia, a milestone that’s significant in that it’s one of several emerging memories considered to be a next-generation candidate to replace DRAM and NAND flash, which face scaling challenges as the industry moves to smaller nodes. STT is one of a handful of firms developing MRAM, so the delivery of samples is an important proof point validating both MRAM in general, and STT’s technology in particular.
EE Times recently spoke with Hoberman about the company’s ramp up, and the opportunities for MRAM as more players go to market, including where it might be a viable replacement for incumbent technologies.
Read the full Q&A on EE Times.